Abstract
The shift of the conduction band (CB) edge for thirty different (Lu,Gd) 3 (Ga,Al) 5 O 12 :Ce compositions, with simultaneous variation in Lu/Gd and Ga/Al content was studied using thermally stimulated luminescence (TSL). Specific TSL peaks were related to impurities of Ta, Cr, Yb, Ti and Eu in Lu
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