Crystalline silicon surface passivation by hydrogenated amorphous silicon layers deposited by HWCVD, RF PECVD and VHF PECVD: the influence of thermal annealing on minority carrier lifetime

Schuttauf, J.A.; van der Werf, C.H.M.; Bommel, C.O.; Huijzer, M.J.; van Sark, W.G.J.H.M.; Rath, J.K.; Schropp, R.E.I.; de Santi, G.F.; Ossenbrink, H.; Helm, P.

doi:https://doi.org/10.4229/25thEUPVSEC2010-2AO.1.2

Crystalline silicon surface passivation by hydrogenated amorphous silicon layers deposited by HWCVD, RF PECVD and VHF PECVD: the influence of thermal annealing on minority carrier lifetime

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Crystalline silicon surface passivation by hydrogenated amorphous silicon layers deposited by HWCVD, RF PECVD and VHF PECVD: the influence of thermal annealing on minority carrier lifetime

Schuttauf, J.A.; van der Werf, C.H.M.; Bommel, C.O.; Huijzer, M.J.; van Sark, W.G.J.H.M.; Rath, J.K.; Schropp, R.E.I.; de Santi, G.F.; Ossenbrink, H.; Helm, P.

(2010) Proceedings of the 25th European Photovoltaic Solar Energy Conference, Valencia, 6-10 September 2010, pp. 1114 - 1117

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Keywords: Taverne

DOI: https://doi.org/10.4229/25thEUPVSEC2010-2AO.1.2

Publisher: WIP-Renewable Energies

Note: 25th European Photovoltaic Solar Energy Conference

(Non peer reviewed)

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