Abstract
The bonding rearrangement upon thermal annealing of amorphous silicon nitride (a-SiNx:H) films deposited by hot-wire chemical vapor deposition was studied. A wide range of N/Si atom ratio between 0.5 and 1.6 was obtained for the a-SiNx:H sample series by varying the source gases ratio only. Evolutions of Si–N, Si–H and
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