Strong Long-Range Relaxations of Structural Defects in Graphene Simulated Using a New Semiempirical Potential

Abstract

We present a new semiempirical potential for graphene, which includes also an put-of-plane energy term. This novel potential is developed from density functional theory (DFT) calculations for small numbers of atoms and can be used for configurations with millions of atoms. Our simulations show that buckling Caused by typical defects such as the Stone-Wales (SW) defect extends to hundreds of nanometers. Surprisingly, this long-range relaxation lowers the defect formation energy dramatically-by a factor of 2 or 3-implying that previously published DFT-calculated defect formation energies suffer from large systematic errors. We also show the applicability of the novel potential to other long-range defect including line dislocations and grain boundaries, all of which,exhibit pronounced out-of-plane relaxations. We show that the energy as a function of dislocation separation diverges logarithmically for flat graphene but converges to a constant for freestanding buckled,graphene. A potential in which the atoms: are attracted to the 2D plane restores the logarithmic behavior of the energy. Future simulations employing this potential will elucidate the influence of the typical long-range buckling and rippling on the physical properties of graphene.