Hydrogen and deuterium incorporation in glow discharge amorphous silicon

Abstract

The incorporation of hydrogen in glow discharge a-Si:H is investigated with an isotope method. During deposition D2 or H2 is added to the silane. Although for low silane flow the incorporation of deuterium is affected by isotope exchange this process plays a minor role for high silane flow. At these gas flows it is estimated that the hydrogen in the a-Si:H layer for our conditions originates for 70% from SiHx compounds.