Abstract
2 MeV holmium ions were implanted into Czochralski grown Si at a fluence of 5.5*10^14 Ho/cm^2. Some samples were
co-implanted with oxygen to a concentration of (7±1)*10^19 cm^(-3). After recrystallization, strong Ho segregation to the
surface is observed, which is fully suppressed by co-doping with O. After recrystallization, photoluminescence peaks are
observed at
... read more