Abstract
P-type a-SiOx:H (p-a-SiOx:H) was investigated as a hole transport layer (HTL) in perovskite solar cells (PSCs). First p-a-SiOx:H layers were fabricated and characterised then full cells were fabricated and their IV-characteristics studied. It was discovered that a large barrier is present preventing efficient extraction of the holes from the perovskite
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