Single and multijunction silicon based thin film solar cells on a flexible substrate with absorber layers made by hot-wire CVD

Abstract

With the worldwide growing concern about reliable energy supply and the environmental problems of fossil and nuclear energy production, the need for clean and sustainable energy sources is evident. Solar energy conversion, such as in photovoltaic systems, can play a major role in the urgently needed energy transition in electricity production. Solar cells based on thin film silicon and its alloys are a promising candidate that is capable of fulfilling the fast increasing demand of a reliable solar cell supply. The conventional method to deposit silicon thin films is based on plasma enhanced chemical vapour deposition (PECVD) techniques, which have the disadvantage of increasing film inhomogeneity at a high deposition rate when scaling up for the industrial production. In this thesis, we study the possibility of making high efficiency single and multijunction thin film silicon solar cells with the so-called hot-wire CVD technique, in which no strong electromagnetic field is involved in the deposition. Therefore, the up-scaling for industrial production is straightforward. We report and discuss our findings on the correlation of substrate surface rms roughness and the main output parameter of a solar cell, the open circuit voltage Voc of c-Si:H n i p cells. By considering all the possible reasons that could influence the Voc of such cells, we conclude that the near linear correlation of Voc and substrate surface rms roughness is the result the two most probable reasons: the unintentional doping through the cracks originated near the valleys of the substrate surface due to the in-diffusion of impurities, and the high density electrical defects formed by the collision of columnar silicon structures. Both of them relate to the morphology of substrate surface. Therefore, to have the best cell performance on a rough substrate surface, a good control on the substrate surface morphology is necessary. Another issue influencing the performance of c-Si:H solar cells is the change in layer crystallinity during the growth of the c-Si:H i-layer. For PECVD deposited cells, it is often found that the layer crystallinity is enhanced with increasing film thickness. We found for Hot-wire deposited cells, however, the opposite development in material structure: the material becomes amorphous near the end of the deposition. This results in a deterioration of cell performance. We therefore introduce a so-called H2 reverse profiling technique, in which H2 is increased during the c-Si:H i-layer deposition. With this technique, a cell with an efficiency of 8.5% has been reached, which is in line with the best reported PECVD cells deposited on the same type of substrate. In the literature, carrier transport in c-Si:H cells has been a topic for debate. In this thesis, we present our finding of photogating effect on the spectral response of c-Si:H solar cells. When measured under coloured bias light, the apparent quantum efficiency value of a c-Si:H cell can be largely enhanced. This phenomenon is a typical result of trapping induced field modification in the bulk of a drift type solar cell. The discovery of this phenomenon has experimentally proved that field-driven transport to a large extend exist in a c-Si:H solar cell.